700nm InP quantum dot lasers with strained confinement layers

Elliott, Stella N., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Krysa, Andrey B. 2012. 700nm InP quantum dot lasers with strained confinement layers. Presented at: 23rd IEEE International Semiconductor Laser Conference (ISLC), San Diego, CA, USA, 7-10 Oct 2012. Proceedings of 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE, pp. 62-63. 10.1109/ISLC.2012.6348335

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Abstract

InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250Acm-2 at 20° C and 80° C respectively are produced by reducing carrier population and recombination through strain engineering.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISBN:	9781457708282
Last Modified:	28 Oct 2022 09:06
URI:	https://orca.cardiff.ac.uk/id/eprint/73322

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