Elliott, Stella N., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Krysa, Andrey B. 2012. 700nm InP quantum dot lasers with strained confinement layers. Presented at: 23rd IEEE International Semiconductor Laser Conference (ISLC), San Diego, CA, USA, 7-10 Oct 2012. Proceedings of 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE, pp. 62-63. 10.1109/ISLC.2012.6348335 |
Official URL: http://dx.doi.org/10.1109/ISLC.2012.6348335
Abstract
InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm-2 and 250Acm-2 at 20° C and 80° C respectively are produced by reducing carrier population and recombination through strain engineering.
Item Type: | Conference or Workshop Item (Paper) |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | IEEE |
ISBN: | 9781457708282 |
Last Modified: | 28 Oct 2022 09:06 |
URI: | https://orca.cardiff.ac.uk/id/eprint/73322 |
Actions (repository staff only)
Edit Item |