Improved laser performance in NIR InP dot based structures with strained layers

Elliott, Stella, Kasim, Makarimi, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Krysa, Andrey B. 2014. Improved laser performance in NIR InP dot based structures with strained layers. Presented at: 2014 International Semiconductor Laser Conference (ISLC), Palma de Mallorca, Spain, 7-10 Sept 2014. Proceedings of the 2014 International Semiconductor Laser Conference (ISLC). IEEE, pp. 86-87. 10.1109/ISLC.2014.176

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Abstract

We achieve lower elevated temperature threshold current densities: 250Acm-2 (80°C) and 575Acm-2 (125°C) (2mm lasers) for increased strained layer Ga fraction of 0.58 with 714nm lasing in 1mm devices (all broad area uncoated facets).

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISBN:	9781479957217
Last Modified:	28 Oct 2022 09:06
URI:	https://orca.cardiff.ac.uk/id/eprint/73323

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