Field effect transistor on hetero-structure GaN/InxGa1-xN

Alexandrov, D., Dimitrrova, R., Butcher, K. S. A., Perks, Richard Marc ORCID: https://orcid.org/0000-0003-0873-0537 and Wintrebert-Fouquet, Marie 2006. Field effect transistor on hetero-structure GaN/InxGa1-xN. Presented at: Canadian Conference on Electrical and Computer Engineering 2006 (CCECE '06), Ottawa, Canada, May 2006. Proceedings of the IEEE Canadian Conference on Electrical and Computer Engineering. Proceedings of the the IEEE Canadian Conference on Electrical and Computer Engineering. IEEE, pp. 537-540. 10.1109/CCECE.2006.277693

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Abstract

Progress in the design of field effect transistor on hetero-structure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/InxGa1-xN hetero-structure is prepared to have both thickness ~50 mum and high specific resistance. The horizontal FET structure is prepared in order to achieve 1 mum gate length and 17 mum gate width. The technological methods used in the preparation of the FET structure are described. The static current-voltage characteristics are determined. It is found that there is gate threshold voltage that varies in range 2.1-2.4 V for n-channel MOS and in range -3.3--3.4 V for p-channel MOS . Also it is found that the drain current varies in the range ~7 muA if the drain voltage is 5 V and the operational point is chosen to be 3.5 V of the gate voltage. Both parameters the dynamic channel resistance and the amplification factor are determined as well

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	IEEE
ISBN:	1424400384
Last Modified:	17 Oct 2022 10:16
URI:	https://orca.cardiff.ac.uk/id/eprint/7577

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