Epitaxial Growth Studied by Surface X-Ray Diffraction

MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Norris, C., Vlieg, E., van der Gon, A. Denier and van der Veen, J. F. 1988. Epitaxial Growth Studied by Surface X-Ray Diffraction. Presented at: 2nd International Conference on the Structure of Surfaces (ICSOS II), Amsterdam, The Netherlands, 22–25 June 1987. Published in: van der Veen, Johannes Friso and Van Hove, Michel A. eds. Epitaxial Growth Studied by Surface X-Ray Diffraction:The Structure of Surfaces II. Springer Series in Surface Sciences (11) Berlin, Germany: Springer Berlin Heidelberg, pp. 438-442. 10.1007/978-3-642-73343-7_72

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Abstract

Epitaxial growth is intimately related to the presence of steps, islands and other forms of surface irregularity. The characterisation of atomic disorder at a surface is therefore central to our understanding of the nature and kinetics of adsorption and, ultimately, to the successful growth of semiconductor structures by molecular beam epitaxy. Surface sensitive diffraction techniques can provide important statistical information about disorder over a wide spatial region. Electron diffraction: LEED and RHEED [1,2] has been used for this but the interpretation is inevitably confused by consideration of the role of multiple scattering. X-ray diffraction, on the other hand, may be interpreted within the kinematical approximation and, with the development of intense synchrotron radiation sources, is finding increasing application in the field of surface crystallography.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Additional Information:	Book Part VI
Publisher:	Springer Berlin Heidelberg
ISBN:	9783642733451
ISSN:	0931-5195
Last Modified:	28 Oct 2022 10:01
URI:	https://orca.cardiff.ac.uk/id/eprint/76451

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