Reduction of electrical baseband memory effect in high-power LDMOS devices using optimum termination for IMD3 and IMD5 using active load-pull

Alghanim, A., Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552, Williams, T., Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 2008. Reduction of electrical baseband memory effect in high-power LDMOS devices using optimum termination for IMD3 and IMD5 using active load-pull. Presented at: IEEE MTT-S International Microwave Symposium Digest, Atlanta, USA, pp. 415-418. 10.1109/MWSYM.2008.4633191

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Item Type:	Conference or Workshop Item (Paper)
Schools:	Engineering
Last Modified:	17 Oct 2022 10:22
URI:	https://orca.cardiff.ac.uk/id/eprint/7825

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