3–3.6-GHz wideband GaN Doherty Power Amplifier exploiting output compensation stages

Moreno Rubio, Jorge ORCID: https://orcid.org/0000-0003-3376-4464, Fang, Jie, Camarchia, Vittorio, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Pirola, Marco and Ghione, Giovanni 2012. 3–3.6-GHz wideband GaN Doherty Power Amplifier exploiting output compensation stages. IEEE Transactions on Microwave Theory and Techniques 60 (8) , pp. 2543-2548. 10.1109/TMTT.2012.2201745

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Abstract

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3-3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher:	IEEE
ISSN:	0018-9480
Last Modified:	01 Nov 2022 09:29
URI:	https://orca.cardiff.ac.uk/id/eprint/88093

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