Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification

Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Camarchia, Vittorio, Cappelluti, Federica, Guerrieri, Simona Donati, Lima, Eduardo G., Ghione, Giovanni and Pirola, Marco 2009. Behavioral modeling of GaN-based power amplifiers: impact of electrothermal feedback on the model accuracy and identification. Microwave and Optical Technology Letters 51 (11) , pp. 2789-2792. 10.1002/mop.24732

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Abstract

In this article, we discuss the accuracy of behavioral models in simulating the intermodulation distortion (IMD) of microwave GaN-based high-power amplifiers in the presence of strong electrothermal (ET) feedback. Exploiting an accurate self-consistent ET model derived from measurements and thermal finite-element method simulations, we show that behavioral models are able to yield accurate results, provided that the model identification is carried out with signals with wide bandwidth and large dynamics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Additional Information:	behavioral model; GaN HEMT; power amplifiers; electrothermal models
Publisher:	John Wiley & Sons
ISSN:	0895-2477
Last Modified:	01 Nov 2022 09:29
URI:	https://orca.cardiff.ac.uk/id/eprint/88096

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