Optically controlled excitonic transistor

Andreakou, P., Poltavtsev, S. V., Leonard, J. R., Calman, E. V., Remeika, M., Kuznetsova, Y. Y., Butov, L. V., Wilkes, Joe ORCID: https://orcid.org/0000-0001-6776-9162, Hanson, M. and Gossard, A.C. 2014. Optically controlled excitonic transistor. Applied Physics Letters 104 , 091101. 10.1063/1.4866855

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Abstract

Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all optical excitonic routers.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Additional Information:	PDF uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ [accessed 20/05/2016]
Publisher:	American Institute of Physics
ISSN:	0003-6951
Funders:	NSF, EU ITN INDEX, Strategic MIT-Skoltech development program, Russian Ministry of Education and Science, Intel, EPSRC
Date of First Compliant Deposit:	20 May 2016
Date of Acceptance:	6 January 2014
Last Modified:	05 May 2023 18:55
URI:	https://orca.cardiff.ac.uk/id/eprint/89172

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