Heyn, Christian, Schnüll, Sandra, Jesson, David E. ![]() |
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Abstract
We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of local droplet etching using Ga droplets with long-time thermal annealing. The cone-like shape of inverted nanoholes formed by droplet etching is transformed during long-time annealing into widened holes with flat bottoms and reduced depth. This is qualitatively understood using a simplified model of mass transport incorporating surface diffusion and evaporation. The hole diameter can be thermally controlled by varying the annealing time or annealing temperature which provides a method for tuning template morphology for subsequent nanostructure nucleation. We also demonstrate the integration of the combined droplet/thermal etching process with heteroepitaxy by the thermal control of hole depth in AlGaAs layers.
Item Type: | Article |
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Date Type: | Published Online |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | Springer |
ISSN: | 1556-276X |
Funders: | EU |
Date of First Compliant Deposit: | 21 April 2016 |
Date of Acceptance: | 27 May 2014 |
Last Modified: | 04 May 2023 20:40 |
URI: | https://orca.cardiff.ac.uk/id/eprint/89545 |
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