Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources

Lee, Wook-Jae ORCID: https://orcid.org/0000-0001-8430-4797, Kim, Hyunseok, Farrell, Alan C., Senanayake, Pradeep and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2016. Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources. Applied Physics Letters 108 (8) , 081108. 10.1063/1.4942777

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Abstract

A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, III-V semiconductornanopillars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering Schools > Physics and Astronomy
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Funders:	AFOSR (FA9550-15-1-0324), NSF (DMR-1309137), MDA (HQ0147-14-C-7011)
Date of Acceptance:	13 February 2016
Last Modified:	01 Nov 2022 09:56
URI:	https://orca.cardiff.ac.uk/id/eprint/89707

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