Farrell, Alan C., Lee, Wook-Jae  ORCID: https://orcid.org/0000-0001-8430-4797, Senanayake, Pradeep, Haddad, Michael A., Prikhodko, Sergey V. and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481
2015.
High-quality InAsSb nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition.
Nano Letters
15
(10)
, pp. 6614-6619.
10.1021/acs.nanolett.5b02389
|
Abstract
We report on the first demonstration of InAs1–xSbx nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy Schools > Engineering |
| Subjects: | Q Science > QB Astronomy Q Science > QC Physics |
| Publisher: | American Chemical Society |
| ISSN: | 1530-6984 |
| Last Modified: | 01 Nov 2022 09:56 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/89709 |
Citation Data
Cited 27 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
 |
Edit Item |
Dimensions
Dimensions