Farrell, Alan C., Lee, Wook-Jae ![]() ![]() |
Abstract
We report on the first demonstration of InAs1–xSbx nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy Engineering |
Subjects: | Q Science > QB Astronomy Q Science > QC Physics |
Publisher: | American Chemical Society |
ISSN: | 1530-6984 |
Last Modified: | 01 Nov 2022 09:56 |
URI: | https://orca.cardiff.ac.uk/id/eprint/89709 |
Citation Data
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