Novel GaAs surface phases via direct control of chemical potential

Zheng, C. X., Tersoff, J., Tang, W. X., Morreau, A. and Jesson, D. E. ORCID: https://orcid.org/0000-0003-0897-1445 2016. Novel GaAs surface phases via direct control of chemical potential. Physical Review B 93 (19) , 195314. 10.1103/PhysRevB.93.195314

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Abstract

Using in situ surface electron microscopy, we show that the surface chemical potential of GaAs (001), and hence the surface phase, can be systematically controlled by varying temperature with liquid Ga droplets present as Ga reservoirs. With decreasing temperature, the surface approaches equilibrium with liquid Ga. This provides access to a regime where we find phases ultrarich in Ga, extending the range of surface phases available in this technologically important system. The same behavior is expected to occur for similar binary or multicomponent semiconductors such as InGaAs.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Additional Information:	PDF uploaded in accordance with publisher's policies at http://www.sherpa.ac.uk/romeo/issn/2469-9950/ (2.6.16).
Publisher:	American Physical Society
ISSN:	2469-9950
Funders:	European Union
Date of First Compliant Deposit:	31 May 2016
Date of Acceptance:	23 April 2016
Last Modified:	13 Nov 2023 15:06
URI:	https://orca.cardiff.ac.uk/id/eprint/91384

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