Axial diffusion barriers in near-infrared nanopillar LEDs

Scofield, Adam C., Lin, Andrew, Haddad, Michael and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2014. Axial diffusion barriers in near-infrared nanopillar LEDs. Nano Letters 14 (11) , pp. 6037-6041. 10.1021/nl501022v

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Abstract

The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QB Astronomy Q Science > QC Physics
Publisher:	American Chemical Society
ISSN:	1530-6984
Last Modified:	01 Nov 2022 10:26
URI:	https://orca.cardiff.ac.uk/id/eprint/91481

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