Rath, Arup K., Bernechea, Maria ![]() |
Official URL: http://dx.doi.org/10.1002/adma.201101399
Abstract
Bi2S3 nanocrystals are employed as an n-type, non-toxic, inorganic, solution-processed semiconductor in thin film solar cells. The first solution processed-inorganic p-n junction based on p-type PbS QDs and n-type Bi2S3 nanocrystals with both phases contributing to photocarrier generation is demonstrated. The reported devices show a power conversion efficiency of 1.6% for 860 nm PbS QDs and over 1% for 1300 nm PbS QDs.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TP Chemical technology |
Publisher: | Wiley-VCH |
ISSN: | 0935-9648 |
Last Modified: | 01 Nov 2022 11:00 |
URI: | https://orca.cardiff.ac.uk/id/eprint/93531 |
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