Chemical nucleation of diamond films

Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Thomas, Evan L. H., Jenny, Titus A. and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004 2016. Chemical nucleation of diamond films. ACS Applied Materials and Interfaces 8 (39) , pp. 26220-26225. 10.1021/acsami.6b08286

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Abstract

With the large differences in surface energy between film and substrate in combination with the low sticking coefficient of hydrocarbon radicals, nanocrystalline diamond growth on foreign substrates typically results in poor nucleation densities. A seeding technique is therefore required to realize pinhole-free and thin coalesced films. In this work, a chemical nucleation method for growth of diamond on nondiamond substrates based on 2,2-divinyladamantane is shown. After treating with the carbon-containing DVA, the chemically treated wafers were exposed to low-power-density plasma, known as the incubation phase, to facilitate the formation of diamond nucleation sites followed by a high-power-density growth regime to produce coalesced films. The resulting films demonstrate high crystallinity, whereas the Raman spectra suggest high-quality diamond with low sp2 content.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Uncontrolled Keywords:	adamantane; chemical nucleation; chemical vapor deposition; diamond; diamond growth
Additional Information:	PDF uploaded in accordance with publisher's policies at http://www.sherpa.ac.uk/romeo/issn/1944-8244/ (accessed 30.9.16).
Publisher:	American Chemical Society
ISSN:	1944-8244
Funders:	EPSRC
Date of First Compliant Deposit:	30 September 2016
Date of Acceptance:	14 September 2016
Last Modified:	12 Nov 2024 10:30
URI:	https://orca.cardiff.ac.uk/id/eprint/94542

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