Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon

Demchenko, Iraida N., Lisowski, Wojciech, Syryany, Yevgen, Melikhov, Yevgen ORCID: https://orcid.org/0000-0002-9787-5238, Zaytseva, Iryna, Konstantynov, Pavlo, Chernyshova, Maryna and Cieplak, Marta 2017. Use of XPS to clarify the Hall coefficient sign variation in thin niobium layers buried in silicon. Applied Surface Science 399 , pp. 32-40. 10.1016/j.apsusc.2016.12.028

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Abstract

Si/Nb/Si trilayers formed with 9.5 and 1.3 nm thick niobium layer buried in amorphous silicon were prepared by magnetron sputtering and studied using XPS depth-profile techniques in order to investigate the change of Hall coefficient sign with thickness. The analysis of high-resolution (HR) XPS spectra revealed that the thicker layer sample has sharp top interface and metallic phase of niobium, thus holes dominate the transport. In contrast, the analysis indicates that the thinner layer sample has a Nb-rich mixed alloy formation at the top interface. The authors suggest that the main effect leading to a change of sign of the Hall coefficient for the thinner layer sample (which is negative contrary to the positive sign for the thicker layer sample) may be related to strong boundary scattering enhanced by the presence of silicon ions in the layer close to the interface/s. The depth-profile reconstruction was performed by SESSA software tool confirming that it can be reliably used for quantitative analysis/interpretation of experimental XPS data.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Date of First Compliant Deposit:	13 December 2016
Date of Acceptance:	4 December 2016
Last Modified:	06 Jul 2023 02:23
URI:	https://orca.cardiff.ac.uk/id/eprint/96868

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