A 4W Doherty power amplifier in GaN MMIC technology for 15GHz applications

Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Camarchia, Vittorio, Moreno Rubio, Jorge ORCID: https://orcid.org/0000-0003-3376-4464, Pirola, Marco and Ghione, Giovanni 2017. A 4W Doherty power amplifier in GaN MMIC technology for 15GHz applications. IEEE Microwave and Wireless Components Letters 27 (4) , pp. 365-367. 10.1109/LMWC.2017.2678440

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Abstract

This letter presents an integrated Doherty power amplifier (PA) in 0.25- μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an output power of 36 ± 0.5 dBm between 13.7 and 15.3 GHz, while at 14.6 GHz, it shows a 6-dB output back-off efficiency higher than 28%. Modulated signal measurements applying digital predistortion demonstrate the compatibility of the amplifier with point-to-point radio requirements. To the best of our knowledge, this PA has the highest back-off efficiency for the 15-GHz band, and is the first GaN Doherty in the Ku-band.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords:	Doherty, gallium nitride, microwave monolithic integrated circuit (MMIC)
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	1531-1309
Date of First Compliant Deposit:	30 January 2017
Date of Acceptance:	6 January 2017
Last Modified:	06 May 2023 03:44
URI:	https://orca.cardiff.ac.uk/id/eprint/97876

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