A practicable de-embedding network at higher frequency of a packaged GaN device

Dong, Shi-Wei, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Wang, Guofeng and Lees, Jonathan ORCID: https://orcid.org/0000-0002-6217-7552 2016. A practicable de-embedding network at higher frequency of a packaged GaN device. Presented at: 2016 IEEE MTT-S International Wireless Symposium (IWS), 14-16 March 2016. IEEE MTT-S International Wireless Symposium (IWS), 2016. IEEE, p. 1. 10.1109/IEEE-IWS.2016.7585473

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Abstract

The intrinsic performance of the devices is of great meaning during power amplifiers design. A method to update de-embedding network at higher frequency for packaged power devices is put forward based on physical modeling idea. The de-embedding network at 5.8 GHz of a packaged GaN HEMT is presented and its practicability is verified through error analysis. This method is prospected to be applied to other packaged microwave devices.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher:	IEEE
ISBN:	978-1-5090-0696-0
Last Modified:	21 Oct 2022 07:03
URI:	https://orca.cardiff.ac.uk/id/eprint/99037

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