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Wallis, D 2018. The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics 51 (16) , 163001.
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Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, Xiaojun, Wallis, D, Guiney, I and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.

Eblabla, A, Li, X, Thayne, I, Wallis, D, Guiney, I and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2015. Effect of AlN spacer in the layer structure on high Rf performance GaN-Based HEMTs on low resistivity silicon at K-Band application. Presented at: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015.

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