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| Wallis, D 2018. The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics 51 (16) , 163001. |
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Eblabla, Abdalla  ORCID: https://orcid.org/0000-0002-5991-892X, Li, Xiaojun, Wallis, D, Guiney, I and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097
2016.
GaN-based HEMTs on low resistivity silicon technology for microwave applications.
Presented at: 8th Wide Bandgap Semiconductor and Components Workshop,
Harwell, UK,
12-13 Sept 2016.
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Eblabla, A, Li, X, Thayne, I, Wallis, D, Guiney, I and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097
2015.
Effect of AlN spacer in the layer structure on high Rf performance GaN-Based HEMTs on low resistivity silicon at K-Band application.
Presented at: 11th International Conference on Nitride Semiconductors (ICNS-11),
Beijing, China,
30 Aug - 4 Sept 2015.
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