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Number of items: 16.

Varghese, Arathy, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2024. Open-gated GaN HEMT-based pH detectors using patterned sensing area. IEEE Sensors Journal 24 (23) , pp. 38620-38626. 10.1109/jsen.2024.3477744
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Kumar, Ashish, Varghese, Arathy, Kalra, Dheeraj, Raunak, Anshuman, Jaiverdhan, Prasad, Mahanth, Janyani, Vijay and Yadav, R.P. 2024. MEMS-based piezoresistive and capacitive microphones: A review on materials and methods. Materials Science in Semiconductor Processing 169 , 107879. 10.1016/j.mssp.2023.107879

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Varghese, Arathy, Chandrashekar, Hareesh, Uren, Michael J., Kuball, Martin and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC), Berlin, Germany, 19-21 September 2023. Proceedings of 53rd European Microwave Conference. IEEE, pp. 38-41. 10.23919/EuMC58039.2023.10290587

Kumar, Ashish, Varghese, Arathy, Kalra, Dheeraj, Pancholi, Sidharth and Sharma, Gaurav Kumar 2023. Optimizing bio-sensor design with support vector regression technique for AlGaN/GaN MOS-HEMT. IEEE Sensors Letters 7 (9) , 7004504. 10.1109/LSENS.2023.3307064

Bhat, Aasif Mohammad, Periasamy, C., Poonia, Ritu, Varghese, Arathy, Shafi, Nawaz and Tripathy, Sudhiranjan 2023. AlGaN/GaN HEMT based pH detection using atomic layer deposition of Al2O3 as sensing membrane and passivation. IEEE Transactions on Nanotechnology 22 , 466 - 472. 10.1109/TNANO.2023.3305360

Kumar, Ashish, Varghese, Arathy, Sharma, Girraj, Kumar, Manish, K Sharma, Gaurav, Prasad, Mahanth, Janyani, Vijay, Yadav, R.P. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2023. Optimization and fabrication of MEMS based piezoelectric acoustic sensor for wide frequency range and high SPL acoustic application. Micro and Nanostructures 179 , 207592. 10.1016/j.micrna.2023.207592
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Bhat, Aasif Mohammad, Poonia, Ritu, Varghese, Arathy, Shafi, Nawaz and Periasamy, C. 2023. AlGaN/GaN high electron mobility transistor for various sensing applications: A review. Micro and Nanostructures 176 , 207528. 10.1016/j.micrna.2023.207528
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Kumar, Ashish, Varghese, Arathy, Sharma, Anup, Prasad, Mahanth, Janyani, Vijay, Yadav, R.P. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2022. Recent development and futuristic applications of MEMS based piezoelectric microphones. Sensors and Actuators A: Physical 347 , 113887. 10.1016/j.sna.2022.113887
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Angamuthu, Revathy, ChettiaGoundar Sengodan, Boopathi, Anandan, Mohanbabu, Varghese, Arathy and Vakkalakula, Bharath Sreenivasulu 2022. LG 55 nm T-gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation. International Journal of RF and Microwave Computer-Aided Engineering 32 (10) , e23308. 10.1002/mmce.23308

Ghosh, Sukanya, Rajan, Lintu and Varghese, Arathy 2022. Junctionfree gate stacked vertical TFET hydrogen sensor at room temperature. IEEE Transactions on Nanotechnology 21 , pp. 655-662. 10.1109/TNANO.2022.3217652
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Varghese, Arathy, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Wu, Zehao, Ghozati, Seyed Urman ORCID: https://orcid.org/0000-0002-6014-5223 and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22 (12) , pp. 12307-12313. 10.1109/JSEN.2022.3170653
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Kumar, Ashish, Varghese, Arathy and Janyani, Vijay 2022. Fabrication of graphene-ZnO heterostructure-based flexible and thin platform-based UV detector. Journal of Materials Science: Materials in Electronics 33 , pp. 3880-3890. 10.1007/s10854-021-07578-8
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Murugapandiyan, P., Nirmal, D., Ajayan, J., Varghese, Arathy and Ramkumar, N. 2022. Investigation of influence of SiN and SiO2 passivation in gate field plate double heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N high electron mobility transistors. Silicon 14 (4) , 1421–1429. 10.1007/s12633-020-00899-z

Murugapandiyan, P., Nirmal, D., Tanvir Hasan, Md., Varghese, Arathy, Ajayan, J., Augustine Fletcher, A.S. and Ramkumar, N. 2021. Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study. Materials Science and Engineering: B 273 , 115449. 10.1016/j.mseb.2021.115449
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Varghese, Arathy, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21 (13) , pp. 15361-15368. 10.1109/JSEN.2021.3072476
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Varghese, Arathy, Das, Pallabi and Tallur, Siddharth 2021. A complete analytical model for MOS-HEMT biosensors: capturing the effect of stern layer and charge screening on sensor performance. IEEE Sensors Letters 5 (4) , 2000504. 10.1109/LSENS.2021.3065509

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