Chatterjee, I., Uren, M. J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K. B., Zaidi, Z., Houston, P. A., Wallis, David ![]() |
Official URL: http://dx.doi.org/10.1109/IRPS.2016.7574529
Abstract
Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 9781467391382 |
ISSN: | 1938-1891 |
Last Modified: | 23 Oct 2022 13:02 |
URI: | https://orca.cardiff.ac.uk/id/eprint/109483 |
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