Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

Chatterjee, I., Uren, M. J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K. B., Zaidi, Z., Houston, P. A., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I. and Humphreys, C. J. 2016. Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. Presented at: 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA, 17-21 April 2016. 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE, 4A41-4A45. 10.1109/IRPS.2016.7574529

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Abstract

Charge trapping and transport in the carbon doped GaN buffer of an AlGaN/GaN-on-Si high electron mobility transistor (HEMT) have been investigated. Back-gating and dynamic Ron experiments show that a high vertical leakage current results in significant long-term negative charge trapping in the buffer leading to current collapse under standard device operating conditions. Controlling current-collapse requires control of not only the layer structures and its doping, but also the precise balance of leakage in each layer.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	IEEE
ISBN:	9781467391382
ISSN:	1938-1891
Last Modified:	23 Oct 2022 13:02
URI:	https://orca.cardiff.ac.uk/id/eprint/109483

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