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Optical monitoring of InP monolayer growth rates

Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73 (3) , pp. 345-347. 10.1063/1.121829

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Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP before and during growth by molecular beam epitaxy (MBE). The dominant effect on the RA signal occurring the initiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE growth of InP under commonly used conditions, RA oscillations are clearly observed. These oscillations have been confirmed to correspond to the growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: indium compounds, III-V semiconductors, semiconductor growth, semiconductor epitaxial layers, molecular beam epitaxial growth, surface topography, photoreflectance, reflection high energy electron diffraction
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 04 Jun 2017 02:38

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