Li, Jialun, Zhu, Renqiang, Wong, Ka ![]() |
Official URL: http://dx.doi.org/10.1109/LED.2024.3520200
Abstract
This letter presents the first demonstration of fully-vertical GaN-on-SiC trench MOSFETs enabled by a conductive AlGaN buffer. Good ON-state device performance including a maximum drain current density of 2.43 kA/cm2 and a high threshold voltage of 5 V has been demonstrated. The relatively high specific ON-resistance at low VDS is a result of a knee voltage induced by the yet to be optimized AlGaN/SiC heterojunction. A breakdown voltage of 334 V has been measured. Compared with quasi-vertical GaN-on-silicon trench MOSFETs, less current crowding effect is observed for fully-vertical GaN-on-SiC trench MOSFETs, as well as a better performance at elevated temperatures.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Schools > Physics and Astronomy |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
Date of First Compliant Deposit: | 14 March 2025 |
Date of Acceptance: | 16 December 2024 |
Last Modified: | 17 Mar 2025 11:15 |
URI: | https://orca.cardiff.ac.uk/id/eprint/176899 |
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