Fully-vertical GaN-on-SiC Trench MOSFETs

Li, Jialun, Zhu, Renqiang, Wong, Ka ORCID: https://orcid.org/0000-0003-3770-1380 and May Lau, Kei 2025. Fully-vertical GaN-on-SiC Trench MOSFETs. IEEE Electron Device Letters 46 (2) , pp. 282-285. 10.1109/LED.2024.3520200

Full text not available from this repository.

Abstract

This letter presents the first demonstration of fully-vertical GaN-on-SiC trench MOSFETs enabled by a conductive AlGaN buffer. Good ON-state device performance including a maximum drain current density of 2.43 kA/cm2 and a high threshold voltage of 5 V has been demonstrated. The relatively high specific ON-resistance at low VDS is a result of a knee voltage induced by the yet to be optimized AlGaN/SiC heterojunction. A breakdown voltage of 334 V has been measured. Compared with quasi-vertical GaN-on-silicon trench MOSFETs, less current crowding effect is observed for fully-vertical GaN-on-SiC trench MOSFETs, as well as a better performance at elevated temperatures.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	0741-3106
Date of First Compliant Deposit:	14 March 2025
Date of Acceptance:	16 December 2024
Last Modified:	17 Mar 2025 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/176899

Actions (repository staff only)

Edit Item