Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Sampson, Wesley ORCID: https://orcid.org/0000-0001-7670-0036, Bhat, Aasif Mohammad, Collier, Arthur, Yadollahifarsi, Elham and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.

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Abstract

This paper presents dual-gate (2 × 0.5 μm) RF high electron mobility transistors (HEMTs) on P-GaN/AlGaN on Si substrate for next-generation airborne applications. The dual-gate architecture enhanced switching performance and reduced power loss, achieving a 77% reduction in off-state gate leakage current (0.3 mA/mm at VGS = -6V) and improving the ION/IOFF ratio by 1.9 orders of magnitude (5.45 × 10⁴) over single-gate devices. DC characterization revealed a current density (IDS) of 712 mA/mm, on-resistance (RON) of 3.12 Ω.mm, peak transconductance (GM) of 223 mS/mm, and pinch-off voltage (VP) of -2.4 V. S-parameter measurements showed a cut-off frequency (fT) of 7.12 GHz and a maximum oscillation frequency (fMAX) of 24.18 GHz. These results support the integration of the proposed RF devices with existing E-mode power devices on a single P-GaN/AlGaN HEMT on Si platform, paving the way for integrated transceiver modules.

Item Type:	Conference or Workshop Item (Paper)
Status:	Unpublished
Schools:	Schools > Engineering
Date of First Compliant Deposit:	19 June 2025
Date of Acceptance:	21 December 2024
Last Modified:	19 Jun 2025 14:15
URI:	https://orca.cardiff.ac.uk/id/eprint/179191

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