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A strain dependent study of the (001) Si6Ge6 superlattice

Bass, J. M. and Matthai, Clarence Cherian 1990. A strain dependent study of the (001) Si6Ge6 superlattice. Semiconductor Science and Technology 5 (7) , pp. 707-709. 10.1088/0268-1242/5/7/012

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The authors have performed density-functional-theory calculations on seven (001) Si6Ge6 superlattices grown on substrates with lattice constants ranging from 5.36 to 5.66 AA. They find that, with the exception of the L-derived conduction band states the energies of principal levels vary linearly with the substrate lattice constant. The valence band offset as a function of substrate lattice constant exhibits a discontinuity at the silicon and the germanium lattice constants.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Institute of Physics
ISSN: 0268-1242
Last Modified: 04 Jun 2017 06:49

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