A strain dependent study of the (001) Si6Ge6 superlattice

Bass, J. M. and Matthai, Clarence Cherian 1990. A strain dependent study of the (001) Si6Ge6 superlattice. Semiconductor Science and Technology 5 (7) , pp. 707-709. 10.1088/0268-1242/5/7/012

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Abstract

The authors have performed density-functional-theory calculations on seven (001) Si6Ge6 superlattices grown on substrates with lattice constants ranging from 5.36 to 5.66 AA. They find that, with the exception of the L-derived conduction band states the energies of principal levels vary linearly with the substrate lattice constant. The valence band offset as a function of substrate lattice constant exhibits a discontinuity at the silicon and the germanium lattice constants.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institute of Physics
ISSN:	0268-1242
Last Modified:	04 Jun 2017 06:49
URI:	https://orca.cardiff.ac.uk/id/eprint/65169

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