Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

A molecular dynamics study of InGaAs layers on GaAs substrates

Moran, G. J., Morrison, I. and Matthai, Clarence Cherian 2011. A molecular dynamics study of InGaAs layers on GaAs substrates. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. Materials Research Society Conference Proceedings Cambridge University Press, pp. 315-320. 10.1557/PROC-340-315

Full text not available from this repository.


We have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Cambridge University Press
ISSN: 19464274
Last Modified: 04 Jun 2017 06:50

Citation Data

Actions (repository staff only)

Edit Item Edit Item