Moran, G. J., Morrison, I. and Matthai, Clarence Cherian 2011. A molecular dynamics study of InGaAs layers on GaAs substrates. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. MRS Proceedings. Materials Research Society Conference Proceedings , vol.340 Cambridge University Press, pp. 315-320. 10.1557/PROC-340-315 |
Official URL: http://dx.doi.org/10.1557/PROC-340-315
Abstract
We have performed molecular dynamics simulations of thin layers of InGaAs on GaAs substrates for different In concentrations to determine the critical thickness before strain relaxation occurs. We have considered both dislocation formation and islanding as possible mechanisms for strain relief. The results for the critical thickness for strain relief by misfit dislocations is slightly lower than that found using elasticity theory. For high In concentrations, facetted islands are found to be stable and are energetically favoured
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | Cambridge University Press |
ISSN: | 19464274 |
Last Modified: | 04 Jun 2017 06:50 |
URI: | https://orca.cardiff.ac.uk/id/eprint/65306 |
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