Matthai, Clarence C. and Rainbow, Jessica 2017. Molecular dynamics studies of the melting of copper with vacancies and dislocations at high pressures. MRS Advances 2 (48) , pp. 2597-2602. 10.1557/adv.2017.353 |
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Abstract
Molecular dynamics simulations of the melting process of bulk copper were performed using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) with the interatomic potentials being described by the embedded atom method. The aim of the study was to understand the effects of high pressures and defects on the melting temperature. The simulations were visualised using Visual Molecular Dynamics (VMD). The melting temperature of a perfect copper crystal, was found to be slightly higher than the experimentally observed value. The melting temperature as a function of pressure was determined and compared with experiment. Point and line defects, in the form of dislocations, were then introduced into crystal and the new melting temperature of the crystal determined. We find that the melting temperature decreases as the defect density is increased. Additionally, the slope of the melting temperature curve was found to decrease as the pressure was increased while the vacancy formation energy increases with pressure.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | Cambridge University Press |
ISSN: | 2059-8521 |
Date of First Compliant Deposit: | 5 July 2017 |
Date of Acceptance: | 14 May 2017 |
Last Modified: | 19 Nov 2024 05:30 |
URI: | https://orca.cardiff.ac.uk/id/eprint/101322 |
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