Spin recovery in the 25nm gate length InGaAs field effect transistore

Thorpe, B., Kalna, K., Langbein, Frank Curd ORCID: https://orcid.org/0000-0002-3379-0323 and Schirmer, S. G. 2017. Spin recovery in the 25nm gate length InGaAs field effect transistore. Presented at: International Workshop on Computational Nanotechnology, Windermere, UK, 6-9 June 2017. Proc. International Workshop on Computational Nanotechnology. pp. 168-169.

Preview	PDF - Accepted Post-Print Version Download (183kB) | Preview
Preview	PDF (Poster) - Accepted Post-Print Version Download (1MB) | Preview

Abstract

We augmented an ensemble Monte-Carlo semiconductor device simulator [3] to incorporate electron spin degrees of freedom using a Bloch equation model to investigate the feasibility of spintronic devices. Results are presented for the steady state polarization and polarization decay due to scattering and spin orbit coupling for a III-V MOSFET device as a function of gate voltages, injection polarization and strain.

Item Type:	Conference or Workshop Item (Poster)
Date Type:	Published Online
Status:	Published
Schools:	Schools > Computer Science & Informatics
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Funders:	Ser Cymru National Research Network for Advanced Engineering and Materials (grant NRN 082)
Related URLs:	http://iwcn2017.iopconfs.org/
Date of First Compliant Deposit:	12 June 2017
Last Modified:	02 Nov 2022 11:15
URI:	https://orca.cardiff.ac.uk/id/eprint/101341

Actions (repository staff only)

Edit Item