Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy

Kuball, M., Riedel, G. J., Pomeroy, J. W., Sarua, A., Uren, M. J., Martin, T., Hilton, K. P., Maclean, J. O. and Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 2007. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy. IEEE Electron Device Letters 28 (2) , pp. 86-89. 10.1109/LED.2006.889215

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Abstract

We report on the development of time-resolved Raman thermography to measure transient temperatures in semiconductor devices with submicrometer spatial resolution. This new technique is illustrated for AlGaN/GaN HFETs and ungated devices grown on SiC and sapphire substrates. A temporal resolution of 200 ns is demonstrated. Temperature changes rapidly within sub-200 ns after switching the devices on or off, followed by a slower change in device temperature with a time constant of∼10 and ∼140 μs for AlGaN/GaN devices grown on SiC and sapphire substrates, respectively. Heat diffusion into the device substrate is also demonstrated.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	0741-3106
Last Modified:	23 Oct 2022 13:02
URI:	https://orca.cardiff.ac.uk/id/eprint/109498

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