Subthreshold Mobility in AlGaN/GaN HEMTs

Waller, William M., Uren, Michael J., Lee, Kean Boon, Houston, Peter A., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, Ivor, Humphreys, Colin J., Pandey, Saurabh, Sonsky, Jan and Kuball, Martin 2016. Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 63 (5) , pp. 1861-1865. 10.1109/TED.2016.2542588

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Abstract

Electron mobility of AlGaN/GaN HEMTs is studied using a gate admittance-based technique. This analysis extends to electron densities as low as 4×10 10 cm -2 with good accuracy. Zero lateral electric field is applied, in contrast to conventional methods. At these low electron densities, the mobility can be a factor of ~50 less than that in the ON-state. We reveal a regime at low electron densities where the screening of the two dimensional electron gas (2-DEG) becomes negligible causing the mobility to be independent of electron concentration, suggesting percolative transport. This region defines the rate at which the channel depletes and is a strong indicator of the epitaxial control of the impurities in the GaN channel.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0018-9383
Date of Acceptance:	14 March 2016
Last Modified:	23 Oct 2022 13:02
URI:	https://orca.cardiff.ac.uk/id/eprint/109507

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