Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Miaja, Pablo F., Zaidi, Zaffar H., Qian, Hongtu, Wallis, David J.  ORCID: https://orcid.org/0000-0002-0475-7583, Forsyth, Andrew J., Humphreys, Colin J. and Houston, Peter A.
2017.
All-GaN-integrated cascode heterojunction field effect transistors.
IEEE Transactions on Power Electronics
32
(11)
, pp. 8743-8750.
10.1109/TPEL.2016.2643499
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Abstract
All-GaN-integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal-insulator-semiconductor gate structure on the enhancement mode part. The cascode device exhibited an output current of 300 mA/mm by matching the current drivability of both enhancement and depletion mode parts. The optimization was achieved by shifting the threshold voltage of the depletion mode section to a more negative value with the addition of a dielectric layer under the gate. The switching performance of the cascode was compared to the equivalent GaN enhancement-mode-only device by measuring the hard switching speed at 200 V under an inductive load in a double pulse tester. For the first time, we demonstrate the switching speed advantage of the cascode over equivalent GaN enhancement-mode-only devices, due to the reduced Miller-effect and the unique switching mechanisms. These observations suggest that practical power switches at high power and high switching frequency will benefit as part of an integrated cascode configuration.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Engineering |
| Additional Information: | This work is licensed under a Creative Commons Attribution 3.0 License. |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| ISSN: | 0885-8993 |
| Date of First Compliant Deposit: | 8 March 2018 |
| Date of Acceptance: | 12 December 2016 |
| Last Modified: | 04 May 2023 15:01 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/109514 |
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