Indium antimonide based technology for RF applications

Ashley, T., Buckle, L., Emeny, M., Fearn, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Phillips, T., Powell, J., Tang, A., Wallis, D. ORCID: https://orcid.org/0000-0002-0475-7583 and Wilding, P. 2006. Indium antimonide based technology for RF applications. Presented at: Compound Semiconductor Integrated Circuit Symposium, San Antonio, TX, 12-15 Nov 2006. 10.1109/CSICS.2006.319918

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Abstract

Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so gives the prospect of extremely high frequency operation with very low power dissipation. We report uncooled transistors with cut-off frequency of 340 GHz at a source-drain voltage of 0.5 V, leading towards this goal

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Completion
Status:	Unpublished
Schools:	Engineering
Last Modified:	23 Oct 2022 13:02
URI:	https://orca.cardiff.ac.uk/id/eprint/109516

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