Modelling the closely-coupled cascode switching process

Miaja, Pablo F., Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Humphreys, Colin J., Houston, Peter A. and Forsyth, Andrew J. 2016. Modelling the closely-coupled cascode switching process. Presented at: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 September 2016. 2016 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 10.1109/ECCE.2016.7855268

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Abstract

The cascode combination of transistors is a simple and interesting way of turning a normally-on device into a normally-off one. Cascodes are usually used with wide bandgap materials such as gallium nitride (GaN) and silicon carbide (SiC) in which a wide bandgap normally-on device is connected to a silicon MOSFET. Integration of the different transistors to form a closely-coupled cascode, leads to an improvement in switching characteristics. By undertaking a detailed analysis of the closely-coupled cascode switching behaviour under constant current drive conditions, an insight into the role of the different parasitic capacitances and the current capability (related to the size) of the transistors used can be obtained. This is of great importance when designing all-GaN die-integrated cascodes. Also it provides a basis for comparing cascodes with single devices in terms of the Qg · Ron figure of merit.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	978-1-5090-0737-0
Last Modified:	23 Oct 2022 13:02
URI:	https://orca.cardiff.ac.uk/id/eprint/109520

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