GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4

Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Han, Yu, Lu, Xing and Lau, Kei May 2016. GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Device Letters 37 (1) , pp. 24-27. 10.1109/LED.2015.2499603

Preview

PDF - Accepted Post-Print Version Download (332kB) | Preview

Abstract

In this letter, we report the selective area growth of GaAs, In0.2Ga0.8As, and GaAs/In0.2Ga0.8As/GaAs quantum-well fins of 65-nm width on exactly orientated (001) Si substrates. By exploiting high aspect ratio trenches formed by patterned SiO2 on Si and a V-grooved Si (111) surface in the aspect ratio trapping process, we are able to achieve good material quality and structural properties, as evidenced by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The fabricated GaAs-In0.2Ga0.8As-GaAs fin-array tunnel diodes exhibit a maximum room-temperature peak-to-valley current ratio of 5.4, and negative differential resistance characteristics up to 200 °C.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0741-3106
Date of First Compliant Deposit:	4 April 2018
Date of Acceptance:	9 November 2015
Last Modified:	30 Nov 2024 06:45
URI:	https://orca.cardiff.ac.uk/id/eprint/110475

Citation Data

Cited 22 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item