Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Han, Yu, Lu, Xing and Lau, Kei May
2016.
GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4.
IEEE Electron Device Letters
37
(1)
, pp. 24-27.
10.1109/LED.2015.2499603
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Abstract
In this letter, we report the selective area growth of GaAs, In0.2Ga0.8As, and GaAs/In0.2Ga0.8As/GaAs quantum-well fins of 65-nm width on exactly orientated (001) Si substrates. By exploiting high aspect ratio trenches formed by patterned SiO2 on Si and a V-grooved Si (111) surface in the aspect ratio trapping process, we are able to achieve good material quality and structural properties, as evidenced by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The fabricated GaAs-In0.2Ga0.8As-GaAs fin-array tunnel diodes exhibit a maximum room-temperature peak-to-valley current ratio of 5.4, and negative differential resistance characteristics up to 200 °C.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| ISSN: | 0741-3106 |
| Date of First Compliant Deposit: | 4 April 2018 |
| Date of Acceptance: | 9 November 2015 |
| Last Modified: | 30 Nov 2024 06:45 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/110475 |
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