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GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4

Li, Qiang, Han, Yu, Lu, Xing and Lau, Kei May 2016. GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Device Letters 37 (1) , pp. 24-27. 10.1109/LED.2015.2499603

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Abstract

In this letter, we report the selective area growth of GaAs, In0.2Ga0.8As, and GaAs/In0.2Ga0.8As/GaAs quantum-well fins of 65-nm width on exactly orientated (001) Si substrates. By exploiting high aspect ratio trenches formed by patterned SiO2 on Si and a V-grooved Si (111) surface in the aspect ratio trapping process, we are able to achieve good material quality and structural properties, as evidenced by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The fabricated GaAs-In0.2Ga0.8As-GaAs fin-array tunnel diodes exhibit a maximum room-temperature peak-to-valley current ratio of 5.4, and negative differential resistance characteristics up to 200 °C.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 4 April 2018
Date of Acceptance: 9 November 2015
Last Modified: 27 Apr 2020 19:16
URI: https://orca.cardiff.ac.uk/id/eprint/110475

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