Schottky barriers to CdS and their importance in Schottky barrier theories

Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Zbigniew and Williams, R. H. 1989. Schottky barriers to CdS and their importance in Schottky barrier theories. Semiconductor Science and Technology 4 (1) , pp. 57-59. 10.1088/0268-1242/4/1/011

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Abstract

A study of the transport properties of Schottky barriers to the vacuum- and air-cleaved surfaces of CdS have yielded a wide range of barrier heights which, contrary to popular belief, show no linear correlation with the metal work function. The characteristics have shown a strong dependence on the methods of preparation and subsequent treatment of the diodes. Further investigations using XPS have confirmed that the interfacial chemistry is significant in the Schottky barrier formation process. These results are considered in terms of various Schottky barrier theories and the importance of localised interface states is emphasised.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Condensed matter: electrical, magnetic and optical Surfaces, interfaces and thin films; Nanoscale science and low-D systems; Chemical physics and physical chemistry
Publisher:	Institute of Physics
ISSN:	0268-1242
Last Modified:	04 Jun 2017 02:34
URI:	https://orca.cardiff.ac.uk/id/eprint/11195

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