Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

Sobiesierski, Zbigniew, Clark, S. A. and Williams, R. H. 1992. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science 56-58 (2) , pp. 703-707. 10.1016/0169-4332(92)90325-R

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Abstract

Photoluminescence (PL) measurements are presented for surface quantum wells consisting of ultra-thin layers of InAs deposited on InP by molecular beam epitaxy. The variation of PL peak energy and intensity, with well width and temperature, clearly indicate that radiative recombination occurs within the InAs layers. Moreover, decreases in the PL emission intensities, coupled with the emergence of higher energy PL components, reflect the oxidation of the InAs surface with time.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0169-4332
Last Modified:	04 Jun 2017 02:36
URI:	https://orca.cardiff.ac.uk/id/eprint/11207

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