Fin-array tunneling trigger with tunable hysteresis on (001) silicon substrate

Han, Yu, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2017. Fin-array tunneling trigger with tunable hysteresis on (001) silicon substrate. IEEE Electron Device Letters 38 (5) , pp. 556-559. 10.1109/LED.2017.2689027

Preview

PDF - Submitted Pre-Print Version Download (675kB) | Preview

Abstract

We report the fabrication and characterization of a GaAs fin-array tunneling trigger monolithically integrated on an exact (001) silicon substrate. A Schmitt-trigger-like behavior was observed under double sweep condition by connecting the tunnel diode with an on-chip load resistor. The tunneling trigger circuit was studied using load line analysis. Critical parameters of the circuit were extracted. We found that the circuit hysteresis can be tuned by tailoring of the diode dimensions and load resistor values

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0741-3106
Date of First Compliant Deposit:	6 June 2018
Date of Acceptance:	27 March 2017
Last Modified:	26 Nov 2024 17:45
URI:	https://orca.cardiff.ac.uk/id/eprint/112085

Citation Data

Cited 7 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item