Surface InAs/InP quantum wells: epitaxial growth and characterization

Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Surface InAs/InP quantum wells: epitaxial growth and characterization. Presented at: 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, UK, 8-11 April 1991. Indium Phosphide and Related Materials, 3rd International Conference, Cardiff, UK, 8-11 Apr 1991. INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2. New York: IEEE, pp. 496-499. 10.1109/ICIPRM.1991.147421

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Abstract

The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISBN:	0879426268
Last Modified:	04 Jun 2017 02:36
URI:	https://orca.cardiff.ac.uk/id/eprint/11209

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