Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells

Sobiesierski, Zbigniew, Woolf, D. A., Frova, A. and Phillips, R. T. 1992. Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 10 (4) , pp. 1975-1979. 10.1116/1.586169

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Abstract

The incorporation of hydrogen into strained In0.09Ga0.91As/GaAs(100) quantum well structures has resulted in the observation of luminescence from both shallow and deep radiative states located within individual In0.09Ga0.91As layers. The shallow H‐related states exhibit binding energies which vary from 22.0±0.5 meV to 15.0±0.5 meV, corresponding to well widths of 40 and 160 Å, respectively. Photoluminescence (PL) measurements are presented, which follow the variation in intensity of the individual PL components as a function of both temperature and excitation intensity. PL excitation (PLE) spectra are used to define the electronic states which lead to excitation of each of the shallow H‐related PL transitions. These PLE spectra also contain extra features due to photon recycling. In addition, PL spectra, excited at 1.54 eV, show a splitting of the intrinsic e1–hh1 line shape, for each well, irrespective of whether or not the sample has been hydrogenated. The merits of the possible recombination mechanisms, which might result in this additional structure, are discussed in terms of the available data.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	JVSTB
ISSN:	1071-1023
Last Modified:	04 Jun 2017 02:36
URI:	https://orca.cardiff.ac.uk/id/eprint/11211

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