Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures

Quagliano, L. G., Sobiesierski, Zbigniew, Orani, D. and Ricci, A. 1999. Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures. Physica B: Condensed Matter 263-64 , pp. 775-778. 10.1016/S0921-4526(98)01460-4

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Abstract

The temperature evolution of strain in GaAs layers grown on Si (0 0 1) and Si (1 1 1) substrates has been investigated by Raman scattering. The Raman results show that for temperatures lower than a certain temperature (≅280 K for the (0 0 1) and ≅400 K for (1 1 1) growth directions) the phonon modes for the epilayers shift toward lower frequencies in comparison to bulk material. This is due to the “thermal” strain arising from the difference in thermal expansion coefficients between GaAs epilayer and Si. A reverse phenomenon occurs at higher temperatures indicating the presence of compressive strain due to the mismatch in lattice constants between the GaAs epilayers and the Si substrate.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Lifelong Learning Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Raman spectroscopy; Strain; GaAs/Si; Epitaxial growth
Publisher:	Elsevier
ISSN:	0921-4526
Last Modified:	04 Jun 2017 02:38
URI:	https://orca.cardiff.ac.uk/id/eprint/11230

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