Improved silicon nitride surfaces for next-generation microarrays

Terry, Jonathan G., Campbell, Colin J., Ross, Alan J., Livingston, Andrew D., Buck, Amy H., Dickinson, Paul, Mountford, Christopher P., Evans, Stuart A. G., Mount, Andrew R., Beattie, John S., Crain, Jason, Ghazal, Peter ORCID: https://orcid.org/0000-0003-0035-2228 and Walton, Anthony J. 2006. Improved silicon nitride surfaces for next-generation microarrays. Langmuir 22 (26) , pp. 11400-11404. 10.1021/la060489v

Full text not available from this repository.

Abstract

This work reports how the use of a standard integrated circuit (IC) fabrication process can improve the potential of silicon nitride layers as substrates for microarray technology. It has been shown that chemical mechanical polishing (CMP) substantially improves the fluorescent intensity of positive control gene and test gene microarray spots on both low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films, while maintaining a low fluorescent background. This results in the improved discrimination of low expressing genes. The results for the PECVD silicon nitride, which has been previously reported as unsuitable for microarray spotting, are particularly significant for future devices that hope to incorporate microelectronic control and analysis circuitry, due to the film's use as a final passivating layer

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Medicine
Publisher:	American Chemical Society
ISSN:	0743-7463
Last Modified:	23 Oct 2022 14:20
URI:	https://orca.cardiff.ac.uk/id/eprint/113389

Citation Data

Cited 10 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item