Paola, D.M.D, Velichko, A, Bomers, Mario, Balakrishnan, Nilanthy, Makarovsky, Oleg, Capizzi, Mario, Cerutti, Laurent, Baranov, A.N., Kesaria, Manoj ![]() |
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Abstract
Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the NH bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | Wiley |
ISSN: | 2195-1071 |
Related URLs: | |
Date of First Compliant Deposit: | 10 August 2018 |
Date of Acceptance: | 1 December 2017 |
Last Modified: | 05 May 2023 09:46 |
URI: | https://orca.cardiff.ac.uk/id/eprint/114061 |
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