Velichko, A.V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M.  ORCID: https://orcid.org/0000-0003-1664-0806, Krier, A, Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. and Patane, A.
2016.
Highly-mismatched InAs/InSe heterojunction diodes.
Applied Physics Letters
109
(18)
, 182115.
10.1063/1.4967381
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Official URL: http://dx.doi.org/10.1063/1.4967381
Abstract
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Additional Information: | This is an open access article under the terms of the CC-BY license. |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| Date of First Compliant Deposit: | 6 July 2020 |
| Date of Acceptance: | 27 October 2016 |
| Last Modified: | 06 May 2023 03:08 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/114071 |
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