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Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A.V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M. ORCID:, Krier, A, Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. and Patane, A. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109 (18) , 182115. 10.1063/1.4967381

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We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Additional Information: This is an open access article under the terms of the CC-BY license.
Publisher: AIP Publishing
ISSN: 0003-6951
Date of First Compliant Deposit: 6 July 2020
Date of Acceptance: 27 October 2016
Last Modified: 24 Oct 2022 07:05

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