Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

Wheatley, R., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D. and Krier, A. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106 (23) , 232105. 10.1063/1.4922590

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Abstract

Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and In1−yGayAs1−xNx type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	AIP Publishing
ISSN:	0003-6951
Date of Acceptance:	3 June 2015
Last Modified:	24 Oct 2022 07:39
URI:	https://orca.cardiff.ac.uk/id/eprint/115534

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